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v23990-p709-f40-pm preliminary datasheet flow90pack 1 2nd gen 1200v/25a trench fieldstop igbt4 technology supports designs with 90 mounting angle between heatsink and pcb clip-in pcb mounting clip or screw hetasink mounting motor drives v23990-p709-f40-pm t j =25c, unless otherwise specified parameter symbol value unit inverter igbt t h =80c 30 t c =80c 38 t h =80c 78 t c =80c 119 t sc t j 150c 10 s v cc v ge =15v 800 v inverter fwd t h =80c 24 t c =80c 31 t h =80c 52 t c =80c 79 t j =t j max t p limited by t j max dc forward current p tot gate-emitter peak voltage types maximum ratings condition features flow90pack 1 2nd gen target applications schematic w 175 c repetitive peak collector current maximum junction temperature peak repetitive reverse voltage power dissipation per igbt maximum junction temperature short circuit ratings turn off safe operating area repetitive peak forward current power dissipation per diode collector-emitter break down voltage dc collector current v t j =t j max t j =t j max vce 1200v, tj top max t p limited by t j max v a 1200 a i frm p tot i cpulse t j max i f v rrm v ce i c v ge a v 1200 c 175 t j max w t j =t j max a t j =25c a 50 20 75 75 copyright vincotech 1 revision: 1
v23990-p709-f40-pm preliminary datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm cti >200 comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition clearance -40?+(tjmax - 25) c storage temperature t stg -40?+125 c copyright vincotech 2 revision: 1
v23990-p709-f40-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 5 5,8 6,5 t j =150c t j =25c 1,3 2,01 2,3 t j =150c 2,25 t j =25c 0,002 t j =150c t j =25c 120 t j =150c t j =25c 138 t j =150c 139 t j =25c 31 t j =150c 33 t j =25c 247 t j =150c 320 t j =25c 72 t j =150c 136 t j =25c 1,98 t j =150c 2,88 t j =25c 1,44 t j =150c 2,46 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,21 k/w t j =25c 1 1,83 2,3 t j =150c 1,77 t j =25c 21 t j =150c 26 t j =25c 278 t j =150c 454 t j =25c 2,31 t j =150c 4,45 di ( rec ) max t j =25c 179 /d t t j =150c 96 t j =25c 0,84 t j =150c 1,69 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,83 k/w tj=25c ma ? pf 115 mws ns ns a nc na v v tj=25c tc=100c tc=100c tj=25c 85 rgon=32 ? thermistor r/r r100=1486 ? rated resistance r power dissipation constant deviation of r100 mw/k power dissipation p mw 600 600 25 0,0085 25 0 960 25 1200 collector-emitter saturation voltage collector-emitter cut-off current incl. diode fall time turn-off delay time turn-on delay time rise time gate-emitter leakage current reverse recovery time reverse recovered energy peak rate of fall of recovery current turn-on energy loss per pulse reverse recovered charge inverter fwd peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge c ies 15 25 25 15 rgon=32 ? 0 20 15 rgoff=32 ? f=1mhz mws a/ s c characteristic values value conditions input capacitance output capacitance turn-off energy loss per pulse integrated gate resistor inverter igbt gate emitter threshold voltage v ge(th) v ce(sat) i ces r gint i ges t f e on e off t d(on) i rrm v f erec c oss c rss q rr t rr q gate t r t d(off) v ce =v ge 0 15 2 200 5 -5 % ? 22000 25 v none tj=25c 152 1430 b-value b (25/50) tol. 3% tj=25c 3950 k b (25/100) tj=25c 3996 k b-value tol. 3% vincotech ntc reference b tj=25c copyright vincotech 3 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 13 25 38 50 63 75 012345 v ce (v) i c (a) 0 5 10 15 20 25 024681012 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 15 30 45 60 75 00,511,522,533,5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 13 25 38 50 63 75 012345 v ce (v) i c (a) copyright vincotech 4 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 ? i c = 25 a r goff = 32 ? figure 7 output inverter fwd figure 8 output inverter fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 ? i c = 25 a output inverter e on high t e off high t e on low t e off low t 0 2 4 6 8 0 13253850 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 0 32 64 96 128 160 r g ( ) e (mws) t j = t jmax -25c e rec t j = 25c e rec 0,0 0,5 1,0 1,5 2,0 2,5 0 1 32 53 85 0 i c (a) e (mws) t j = t jmax -25c e rec t j = 25c e rec 0 0,5 1 1,5 2 2,5 0 32 64 96 128 160 r g ( ) e (mws) copyright vincotech 5 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 32 ? i c = 25 a r goff = 32 ? figure 11 output inverter fwd figure 12 output inverter fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 ? v ge = 15 v output inverter t doff t f t don t r 0,00 0,01 0,10 1,00 0 13253850 i c (a) t ( s) t j = t jmax -25c t rr t j = 25c t rr 0,0 0,2 0,4 0,6 0,8 1,0 0 32 64 96 128 160 r gon ( ) t rr ( s) t doff t f t don t r 0,00 0,01 0,10 1,00 0 32 64 96 128 160 r g ( ) t ( s) t j = t jmax -25c t rr t rr t j = 25c 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0 1 32 53 85 0 i c (a) t rr ( s) copyright vincotech 6 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 13 output inverter fwd figure 14 output inverter fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 ? v ge = 15 v figure 15 output inverter fwd figure 16 output inverter fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 ? v ge = 15 v output inverter t j = t jmax - 25c i rrm t j = 25c i rrm 0 15 30 45 60 75 0 32 64 96 128 160 r gon ( ) i rrm (a) t j = t jmax -25c q rr t j = 25c q rr 0 1 2 3 4 5 0 32 64 96 128 160 r gon ( ) q rr ( c) t j = t jmax -25c i rrm t j = 25c i rrm 0 5 10 15 20 25 30 0 13253850 i c (a) i rrm (a) t j = t jmax -25c q rr t j = 25c q rr 0 1 2 3 4 5 6 7 0 13253850 i c (a) q rr ( c) copyright vincotech 7 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 17 output inverter fwd figure 18 output inverter fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(i c )d i 0 /dt,di rec /dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 25 a r gon = 32 ? v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fwd igbt transient thermal impedance f wd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,21 k/w r thjh = 1,83 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) 0,17 9,7e-01 0,13 7,9e-01 0,04 9,4e+00 0,03 7,6e+00 0,57 1,6e-01 0,46 1,3e-01 0,14 1,1e+00 0,12 8,8e-01 0,29 4,0e-02 0,24 3,2e-02 0,74 1,5e-01 0,60 1,2e-01 0,12 6,6e-03 0,10 5,3e-03 0,50 4,3e-02 0,41 3,4e-02 0,06 5,0e-04 0,05 4,0e-04 0,26 6,8e-03 0,21 5,6e-03 0,14 5,6e-04 0,11 4,6e-04 output inverter thermal grease phase change interface thermal grease phase change interface t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z th-jh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t j = t jmax - 25c di 0 /dt di rec /dt high t di rec /dt t j = 25c 0 1000 2000 3000 4000 5000 0 32 64 96 128 160 r gon ( ) di rec / dt (a/ s) di 0 /dt high t di rec /dt high t di rec /dt low t di o /dt low t 0 200 400 600 800 1000 1200 0 13253850 i c (a) di rec / dt (a/ s) di rec /dt di 0 /dt copyright vincotech 8 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 output inverter fwd figure 24 output inverter fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c t j = 175 c output inverter 0 30 60 90 120 150 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 9 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q ge ) at at d = single pulse i c = 25 a t h = 80 oc v ge = 15 v t j =t jmax oc figure 27 output inverter igbt figure 28 output inverter igbt short circuit withstand time as a function of typical short circuit collector current as a function of gate-emitter voltage gate-emitter voltage t sc = f(v ge )v ge = f(q ge ) at at v ce = 1200 v v ce 1200 v t j 175 oc t j = 175 oc output inverter v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 10us 100us 1ms 10ms 100ms dc 10 0 10 3 0 2 4 6 8 10 12 14 16 18 20 0 30 60 90 120 150 180 210 q g (nc) v ge (v) 240 v 960 v 0 2 4 6 8 10 12 14 16 18 12 13 14 15 16 17 v ge (v) t sc ( s) 0 25 50 75 100 125 150 175 200 225 12 13 14 15 16 17 18 19 20 v ge (v) i c(sc) copyright vincotech 10 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 29 igbt reverse bias safe operating area i c = f(v ce ) at t j =t jmax -25 oc u ccminus =u ccplus switching mode : 3phase spwm 0 10 20 30 40 50 60 70 0 200 400 600 800 1000 1200 1400 v ce (v) i c (a) i cmax v cemax i c module i c chip copyright vincotech 11 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 25 45 65 85 105 125 t (c) r/ ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr copyright vincotech 12 revision: 1
v23990-p709-f40-pm preliminary datasheet t j 150 c r g on 32 ? r goff 32 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of tdon, t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 25 a i c (100%) = 25 a t doff = 0,32 s t don = 0,14 s t eoff = 0,74 s t eon = 0,41 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 25 a i c (100%) = 25 a t f = 0,14 s t r = 0,03 s switching definitions output inverter general conditions = = = i c 1% v ce 90% v ge 90% -20 0 20 40 60 80 100 120 -0,3 -0,1 0,1 0,3 0,5 0,7 0,9 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -20 20 60 100 140 180 220 2,7 2,85 3 3,15 3,3 3,45 3,6 3,75 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 time (us) % v ce i c t f i c10% i c90% -20 20 60 100 140 180 220 3 3,05 3,1 3,15 3,2 3,25 3,3 time(us) % t r v ce i c copyright vincotech 13 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 15,07 kw p on (100%) = 15,07 kw e off (100%) = 2,46 mj e on (100%) = 2,88 mj t eoff = 0,74 s t eon = 0,41 s figure 7 output inverter fwd figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 600 v v geon = 15 v i d (100%) = 25 a v c (100%) = 600 v i rrm (100%) = -26 a i c (100%) = 25 a t rr = 0,45 s q g = 179,27 nc switching definitions output inverter i c 1% v ge 90% -20 0 20 40 60 80 100 120 -0,3 -0,15 0 0,15 0,3 0,45 0,6 0,75 0,9 time (us) % p off e off t eoff v ce 3% v ge 10% -20 20 60 100 140 180 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% -120 -80 -40 0 40 80 120 2,8 3 3,2 3,4 3,6 3,8 4 time(us) % i d v d fitted t rr copyright vincotech 14 revision: 1
v23990-p709-f40-pm preliminary datasheet figure 9 output inverter fwd figure 10 output inverter fwd turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 25 a p rec (100%) = 15,07 kw q rr (100%) = 4,45 c e rec (100%) = 1,69 mj t qrr = 1,00 s t erec = 1,00 s switching definitions output inverter t qrr -120 -80 -40 0 40 80 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 % i d q rr time(us) -20 0 20 40 60 80 100 120 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 time(us) % p rec e rec t erec copyright vincotech 15 revision: 1
v23990-p709-f40-pm preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing v23990-p709-f40-pm p709f40 p709f40 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 16 revision: 1
v23990-p709-f40-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright vincotech 17 revision: 1

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